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1. Identity statement
Reference TypeJournal Article
Sitemtc-m16.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier6qtX3pFwXQZ3r59YDa/FEgmH
Repositorysid.inpe.br/iris@1916/2005/04.04.13.45   (restricted access)
Last Update2013:04.15.13.03.04 (UTC) marciana
Metadata Repositorysid.inpe.br/iris@1916/2005/04.04.13.45.37
Metadata Last Update2018:06.05.01.28.20 (UTC) administrator
Secondary KeyINPE-12289-PRE/7610
ISSN1092-5783
Citation KeyFernandezCASLTAFSL:2000:ElPrCu
TitleElectrical properties of cubic InN and GaN epitaxial layers as a function of temperature
Year2000
Access Date2024, May 18
Secondary TypePRE PI {} {} {PRE PI}
Number of Files2
Size138 KiB
2. Context
Author 1 Fernandez, J. R. L.
 2 Chitta, V. A.
 3 Abramof, Eduardo
 4 Silva, Antonio Ferreira da
 5 Leite, J. R.
 6 Tabata, A.
 7 As, D. J.
 8 Frey, T.
 9 Schikora, D.
10 Lischka, K.
Resume Identifier 1
 2
 3 8JMKD3MGP5W/3C9JGUH
 4 8JMKD3MGP5W/3C9JGJC
Group 1
 2
 3 LAS-INPE-MCT-BR
 4 LAS-INPE-MCT-BR
Affiliation 1 Instituto de Física da USP, C.P. 66318, 05315-970 São Paulo, SP, Brazil
 2 Universidade São Francisco, Centro de Ciências Exatas e Tecnológicas
 3 Instituto Nacional de Pesquisas Espaciais (INPE)
 4 Instituto Nacional de Pesquisas Espaciais (INPE)
 5 Instituto de Física da USP
 6 Instituto de Física da USP
 7 Universität Paderborn, FB-6 Physik, Warburger Strasse 100, D-33095 Paderborn
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume595
PagesW3-40
History (UTC)2005-04-04 17:47:13 :: sergio -> administrator ::
2007-04-03 21:34:19 :: administrator -> sergio ::
2008-01-07 12:52:40 :: sergio -> administrator ::
2013-03-12 12:35:15 :: administrator -> marciana :: 2000
2013-05-31 19:11:04 :: marciana -> administrator :: 2000
2018-06-05 01:28:20 :: administrator -> marciana :: 2000
3. Content and structure
Is the master or a copy?is the master
Content Stagecompleted
Transferable1
Content TypeExternal Contribution
Version Typepublisher
AbstractCarrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature.
AreaFISMAT
Arrangementurlib.net > BDMCI > Fonds > Produção anterior à 2021 > LABAS > Electrical properties of...
doc Directory Contentaccess
source Directory Contentthere are no files
agreement Directory Contentthere are no files
4. Conditions of access and use
Languageen
Target Filemrs.pdf
User Groupadministrator
marciana
sergio
Reader Groupadministrator
marciana
Visibilityshown
Copy HolderSID/SCD
Archiving Policydenypublisher denyfinaldraft
Read Permissiondeny from all and allow from 150.163
Update Permissionnot transferred
5. Allied materials
Next Higher Units8JMKD3MGPCW/3ESR3H2
Citing Item Listsid.inpe.br/mtc-m21/2012/07.13.14.44.57 1
sid.inpe.br/mtc-m21/2012/07.13.14.40.22 1
Host Collectionsid.inpe.br/banon/2003/08.15.17.40
6. Notes
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